ULTRAVIOLET DETECTORS: Nitrides push performance of UV photodiodes
نویسنده
چکیده
Development of wide-bandgap III-nitride semiconductors has been a subject of intense focus since the 1990s, primarily driven by the quest for blue lasers and high-brightness light-emitting diodes (LEDs). In parallel, III-nitrides have been studied extensively for use in ultraviolet (UV) photodetectors because they offer intrinsic visibleor solar-blind detection, which would eliminate the need for expensive and efficiency-limiting optical filters to remove out-of-band visible or solar photons. Such detectors would be well suited for numerous applications in the defense, commercial, and scientific arenas, including covert space-to-space communications, early missile-threat detection, chemical and biological threat detection and spectroscopy, flame detection and monitoring, UV environmental monitoring, and UV astronomy.
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